Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures
Corresponding email: arwa200588@yahoo.com
Published at : 17 Jan 2014
Volume : IJtech
Vol 4, No 2 (2013)
DOI : https://doi.org/10.14716/ijtech.v4i2.112
Hattami, A.A., Kadash, E., Rathod, J., Patel, H., Patel, K., Pathak, V., 2013. Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures. International Journal of Technology. Volume 4(2), pp. 121-128
| A.A. AL hattami | Department of Physics, Hodeidah University, Hodeidah city, Republic of Yemen |
| E.A. Kadash | Department of Physics, Hodeidah University, Hodeidah city, Republic of Yemen |
| J.R. Rathod | Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India |
| H.S. Patel | Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India |
| K.D. Patel | Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India |
| V.M. Pathak | Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India |
Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films. CdS thin films with thickness of 1000 nm were deposited by vacuum evaporation at room temperature. Characteristic parameters of Schottky junctions formed by a thermal vapor deposition of 500 nm of Al films on pre-coated CdS glass substrates were obtained experimentally from the I-V characteristics in the temperature range of 303–393 K. Diode parameters, such as the zero-bias barrier height ?b0, flat band barrier height ?bf, ideality factor ?, and series resistance RS were investigated using the thermionic emission method.
Barrier characteristics, Diode, High temperature I-V, Schottky junction
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