• Vol 6, No 3 (2015)
  • Electrical, Electronics, and Computer Engineering

Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement

Anak Agung Ngurah Gde Sapteka, Hoang Nhat Tan, Ryosuke Unno, Daniel Moraru, Arief Udhiarto, Sri Purwiyanti, Michiharu Tabe, Djoko Hartanto, Harry Sudibyo

Corresponding email: anak.agung15@ui.ac.id


Published at : 29 Jul 2015
IJtech : IJtech Vol 6, No 3 (2015)
DOI : https://doi.org/10.14716/ijtech.v6i3.1150

Cite this article as:

Sapteka, A.A.N.G., Tan, H.N., Unno, R., Moraru, D., Udhiarto, A., Purwiyanti, S., Tabe, M., Hartanto, D., Sudibyo, H., 2015. Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement. International Journal of Technology. Volume 6(3), pp. 318-326

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Anak Agung Ngurah Gde Sapteka Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia
Hoang Nhat Tan Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan
Ryosuke Unno Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan
Daniel Moraru Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan
Arief Udhiarto Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia
Sri Purwiyanti Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia
Michiharu Tabe Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan
Djoko Hartanto Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia
Harry Sudibyo Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia
Email to Corresponding Author

Abstract
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This report is focused on the linear region of I-V characteristics of nanoscale highly-doped p-i-n diodes fabricated within ultrathin silicon-on-insulator (SOI) structures with an intrinsic layer length of 200 nm and 700 nm under a forward bias at a temperature range from 50 K to 250 K. The doping concentrations of Boron and Phosphorus in SOI p-i-n diodes are high, 1×1020 cm-3 and 2×1020 cm-3, respectively. The linearity of I-V characteristics of the p-i-n diodes under a certain forward bias voltage range and temperature range from 50 K to 250 K indicate these devices are suitable for low temperature sensing purposes. We conclude that highly-doped p-i-n diodes produce a higher current as the temperature decreases under a certain bias voltage range. Nanoscale diodes with longer and wider intrinsic layers generate higher currents under a certain range of bias voltage and low temperature measurements.

I-V characteristics, P-I-N diode, SOI, Sensor, Temperature

References

Sze, S.M., Ng, K.K., 2007. Physics of Semiconductor Devices, John Wiley and Sons, pp. 123-124

Udhiarto, A., et al., 2013. Observation of Nanosize Effect in Nanosize Effect in Lateral Nanoscale p-n and p-i-n Junctions. IEEE Conference Publications, International Conference on QiR (Quality in Research) 2013, pp.14-18

Souza, M.D., et al., 2010. Thin-film Lateral SOI PIN Diodes for Thermal Sensing Reaching the Cryogenic Regime. Journal Integrated Circuits and Systems, Volume 2(2), pp. 160-167

O’Donnel, K.P., Chen, X., 1991. Temperature Dependence of Semiconductor Band Gaps. Applied Physics Letters, Volume 58(25), pp. 2925-2926

Caverly, R., 1995. Temperature Effects on p-i-n Diode on Forward Bias Resistance. Solid State Electronics, Volume 38(11), pp. 1879-1885

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