Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement
Corresponding email: anak.agung15@ui.ac.id
Published at : 29 Jul 2015
Volume : IJtech
Vol 6, No 3 (2015)
DOI : https://doi.org/10.14716/ijtech.v6i3.1150
Sapteka, A.A.N.G., Tan, H.N., Unno, R., Moraru, D., Udhiarto, A., Purwiyanti, S., Tabe, M., Hartanto, D., Sudibyo, H., 2015. Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement. International Journal of Technology. Volume 6(3), pp. 318-326
| Anak Agung Ngurah Gde Sapteka | Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia |
| Hoang Nhat Tan | Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan |
| Ryosuke Unno | Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan |
| Daniel Moraru | Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan |
| Arief Udhiarto | Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia |
| Sri Purwiyanti | Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia |
| Michiharu Tabe | Nanodevices Lab., Research Institute of Electronics, Shizuoka University, Japan |
| Djoko Hartanto | Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia |
| Harry Sudibyo | Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus Baru UI Depok, Depok 16424, Indonesia |
This report is focused on the linear region of I-V characteristics of nanoscale highly-doped p-i-n diodes fabricated within ultrathin silicon-on-insulator (SOI) structures with an intrinsic layer length of 200 nm and 700 nm under a forward bias at a temperature range from 50 K to 250 K. The doping concentrations of Boron and Phosphorus in SOI p-i-n diodes are high, 1×1020 cm-3 and 2×1020 cm-3, respectively. The linearity of I-V characteristics of the p-i-n diodes under a certain forward bias voltage range and temperature range from 50 K to 250 K indicate these devices are suitable for low temperature sensing purposes. We conclude that highly-doped p-i-n diodes produce a higher current as the temperature decreases under a certain bias voltage range. Nanoscale diodes with longer and wider intrinsic layers generate higher currents under a certain range of bias voltage and low temperature measurements.
I-V characteristics, P-I-N diode, SOI, Sensor, Temperature
Sze, S.M., Ng, K.K., 2007. Physics of Semiconductor Devices, John Wiley and Sons, pp. 123-124
Udhiarto, A., et al., 2013. Observation of Nanosize Effect in Nanosize Effect in Lateral Nanoscale p-n and p-i-n Junctions. IEEE Conference Publications, International Conference on QiR (Quality in Research) 2013, pp.14-18
Souza, M.D., et al., 2010. Thin-film Lateral SOI PIN Diodes for Thermal Sensing Reaching the Cryogenic Regime. Journal Integrated Circuits and Systems, Volume 2(2), pp. 160-167
O’Donnel, K.P., Chen, X., 1991. Temperature Dependence of Semiconductor Band Gaps. Applied Physics Letters, Volume 58(25), pp. 2925-2926
Caverly, R., 1995. Temperature Effects on p-i-n Diode on Forward Bias Resistance. Solid State Electronics, Volume 38(11), pp. 1879-1885