TY  - JOUR
T1  - Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement
AU  - Anak Agung Ngurah Gde  Sapteka,Hoang Nhat  Tan,Ryosuke  Unno,Daniel  Moraru,Arief  Udhiarto,Sri  Purwiyanti,Michiharu  Tabe,Djoko  Hartanto,Harry  Sudibyo
JO  - International Journal of Technology
VL  - 6
IS  - 3
SP  - 291
EP  - 319
PY  - 2015
DA  - 2015/07/29
SN  - 2087-2100
DO  - https://doi.org/10.14716/ijtech.v6i3.1150
UR  - https://ijtech.eng.ui.ac.id/article/view/1395