• Vol 4, No 2 (2013)
  • Metalurgy and Material Engineering

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

A.A. AL hattami, E.A. Kadash, J.R. Rathod, H.S. Patel, K.D. Patel, V.M. Pathak


Cite this article as:
Hattami, A.A., Kadash, E., Rathod, J., Patel, H., Patel, K., Pathak, V., 2013. Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures. International Journal of Technology. Volume 4(2), pp. 121-128
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A.A. AL hattami Department of Physics, Hodeidah University, Hodeidah city, Republic of Yemen
E.A. Kadash Department of Physics, Hodeidah University, Hodeidah city, Republic of Yemen
J.R. Rathod Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India
H.S. Patel Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India
K.D. Patel Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India
V.M. Pathak Department of Physics, Sardar Patel University, Vallabh vidyanagar–388 120, Gujarat, India
Email to Corresponding Author

Abstract
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Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films. CdS thin films with thickness of 1000 nm were deposited by vacuum evaporation at room temperature. Characteristic parameters of Schottky junctions formed by a thermal vapor deposition of 500 nm of Al films on pre-coated CdS glass substrates were obtained experimentally from the I-V characteristics in the temperature range of 303–393 K. Diode parameters, such as the zero-bias barrier height ?b0, flat band barrier height ?bf, ideality factor ?, and series resistance RS were investigated using the thermionic emission method.

Barrier characteristics, Diode, High temperature I-V, Schottky junction

References

Barote, M.A., Yadav, A.A., Masumdar, E.U., 2011. Synthesis, Characterization and Photoelectrochemical Properties of n-CdS Thin Films, Physica B: Physics of Condensed Matter, Volume 406(10), pp. 1865-1871. http://dx.doi.org/10.1016/j.physb.2011.02.044

Brillson, L.J., 1978. Chemical Reactions and Local Charge Redistribution at Metal-CdS and CdSe Interfaces, Physical Review B, Volume 18, pp. 2431-2446. http://dx.doi.org/10.1103/physrevb.18.2431

Chand, S., Kumar, J., 1997. Effect of Barrier Height Distribution on the Behaviour of a Schottky Diode, Journal of Applied Physics, Volume 82(10), pp. 5005-5010. http://dx.doi.org/10.1063/1.366370

Farag, A.A.M., Yahia, I.S., Fadel, M., 2009. Electrical and Photovoltaic Characteristics of Al/n-CdS Schottky Diode, International Journal of Hydrogen Energy, Volume 34, pp. 4906-4913. http://dx.doi.org/10.1016/j.ijhydene.2009.03.034

Guneria, E., Godec, F., Ulutas, C., Kirmizigul, F., Altindemir, G., Gumus, C., 2010. Properties of P-Type SnS Thin Films Prepared by Chemical Bath Deposition, Chalcogenide Letters, Volume 7(12), pp. 685?694.

Gupta, S., Patidar, D., Saxena, N.S., Kananbalasharma, 2009. Electrical Study of Thin Film Al/N-CdS Schottky Junction, Chalcogenide Letters, Volume 6(12), pp. 723-731.

Jang, M., Kim, Y., Jun, M., Lee, S., 2005. Characteristics of Schottky Diode and Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors, Journal of Semiconductor Technology and Science, Volume 5(2), pp. 69-76.

Karadeniz, S., Tu-luo-lu, N., Sahin, M., Safak, H., 2005. Series Resistance Calculation for Ag Contacts on Single Crystal Layered P-SnS and P-SnSe Compound Semiconductors in the Wide Temperature Range, Microelectron Engineering, Volume 81, pp. 125-129. http://dx.doi.org/10.1016/j.mee.2005.04.006

Kathirvel, D., Suriyanarayanan, N., Prabahar, S., Srikanth, S., 2011. Structural, Electrical and Optical Properties of CdS Thin Films by Vacuum Evaporation Deposition, Journal of Ovonic Research, Volume 7(4), pp. 83-92.

Kumar, V., Sharma, D.K., Bansal, M.K., Dwivedi, D.K., Sharma, T.P., 2011. Synthesis and Characterization of Screen-Printed CdS Films, Science of Sintering, Volume 43, pp. 335-341. http://dx.doi.org/10.2298/sos1103335k

Lakshmi Devi, V., Jyothi, I., Rajagopal Reddy, V., Chel-Jong Choi, 2012. Schottky Barrier Parameters and Interfacial Reactions of Rapidly Annealed Au/Cu Bilayer Metal Scheme on N-type InP, The Open Applied Physics Journal, Volume 5, pp.1-9. http://dx.doi.org/10.2174/1874183501205010001

Mahdi, M.A., Kasem, S.J., Hassen, J.J., Swadi, A.A., Ani, S.K.J.A., 2009. Structural and Optical Properties of Chemical Deposition CdS Thin Films, International Journal of Nanoelectronics and Materials, Volume 2, pp.163-172.

Margaritondo, G., 1999. Interface States at Semiconductor Junctions, Reports on Progress in Physics, Volume 62(5), pp.765-808. http://dx.doi.org/10.1088/0034-4885/62/5/203

Mathai, A.J., Patel, K.D., Srivastava, R., 2010. Stability and Phase Transition Studies of GapWSe2 Schottky Diode by Current Voltage Temperature Method, Thin Solid Films, Volume 518(10), pp. 2695-2700. http://dx.doi.org/10.1016/j.tsf.2009.09.022

Naik, S.S., Reddy, V.R., 2012. Temperature Dependency and Current Transport Mechanisms of Pd/V/n-type InP Schottky Rectifiers, Advanced Materials Letters, Volume 3(3), pp. 188-196. http://dx.doi.org/10.5185/amlett.2012.1316

Ogah, O.E., Zoppi, G., Forbes, I., Milesx, R.W., 2008. Properties of Thin Films of Tin Sulphide Produced using the Thermal Evaporation Method, 23rd European Photovoltaic Solar Energy Conference, September1–5, Valencia, Spain, pp. 2580-2583.

Parlaktürk, F., Agasiev, A., Tataro?lu, A., Altindal, S., 2007. Current-voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 structures, Gaza University Journal of Science, Volume 20(4), pp. 97-102.

Patel, M.M., Patel, K.D., Patel, C.A., Patel, K.K., Pathak, V.M., Srivastava, R., 2010. Temperature Dependent Transport and Barrier Properties of DVT Grown Wse2crystals and Schottky Devices, PRAJÑ?—Journal of Pure and Applied Sciences, Volume 18, pp. 119-122.

Reddy, D.S., Reddy, M.B., Reddy, N.N.K., Reddy, V.R., 2011. Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T and C-V-T Measurements, Journal of Modern Physics, Volume 2(3), pp. 113-123. http://dx.doi.org/10.4236/jmp.2011.23018

Rhoderick, E.H., Williams, R.H., 1988. Metal-Semiconductor Contacts (Oxford: Clarendon Press), p. 20, 48.

Rusu, G.I., Prepelita, P., Apetroaei, N., Popa, G., 2005. On the Electronic Transport and Optical Properties of ZnTe Thin Films, Journal of Optoelectronics and Advanced Materials, Volume 7(2), pp. 829-835.

Saikia, R., Kalita, P.K., Datta, P., 2012. Green Synthesized CdS Nanorods for Application in Schottky Type Solar Cell, International Journal of Chemical Science and Technology, Volume 2(2), pp. 23-28.

Sarpatwari, K., 2009. Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: The Effects of Barrier Inhomogenities and Geometry in Bulk and Nanoscale Structures, Ph.D. thesis, the Graduate School, the Pennsylvania State University, pp. 4-6.

Sze, S.M., 1985. Semiconductor Devices: Physics and Technology, 2nd Ed., Inc., U.K., John Wiley & Sons, pp. 224-226.

Tersoff, J., 1985. Schottky Barriers and Semiconductor Band Structures, Physical Review B, Volume 32, pp. 6968-6971. http://dx.doi.org/10.1103/physrevb.32.6968

Tugluoglu, N., Karadeniz, S., Sahin, M., Safak, H., 2004. Temperature-dependent Barrier Characteristics of Ag/p-SnSe Schottky Diodes based on I–V–T Measurements, Semiconductor Science and Technology, Volume 19, pp. 1092-1097. http://dx.doi.org/10.1088/0268-1242/19/9/004

Tung, R.T., 2001. Recent Advances in Schottky Barrier Concepts, Materials Science and Engineering: R, Volume 35(1-3), pp. 1-138. http://dx.doi.org/10.1016/s0927-796x(01)00037-7

Werner, J.H., 1988. Schottky Barrier and pn-junction I/V plots-Small Signal Evaluation, Journal of Applied Physics A, Volume 47(3), pp. 291-300. http://dx.doi.org/10.1007/bf00615935

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