• International Journal of Technology (IJTech)
  • Vol 6, No 6 (2015)

Physics of Strongly-coupled Dopant-atoms in Nanodevices

Physics of Strongly-coupled Dopant-atoms in Nanodevices

Title: Physics of Strongly-coupled Dopant-atoms in Nanodevices
Daniel Moraru, Krzysztof Tyszka, Yuki Takasu, Arup Samanta, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe

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Published at : 30 Dec 2015
Volume : IJtech Vol 6, No 6 (2015)
DOI : https://doi.org/10.14716/ijtech.v6i6.1305

Cite this article as:

Moraru, D., Tyszka, K., Takasu, Y., Samanta, A., Mizuno, T., Jablonski, R., Tabe, M., 2015. Physics of Strongly-coupled Dopant-atoms in Nanodevices. International Journal of Technology. Volume 6(6), pp. 1057-1064



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Daniel Moraru Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Japan
Krzysztof Tyszka Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Japan
Yuki Takasu Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Japan
Arup Samanta Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Japan
Takeshi Mizuno Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Japan
Ryszard Jablonski Institute of Metrology and Biomedical Engineering, Warsaw Univ. of Technology, Sw. A. Boboli 8, Warsaw, Poland
Michiharu Tabe Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Japan
Email to Corresponding Author

Abstract
Physics of Strongly-coupled Dopant-atoms in Nanodevices

In silicon nanoscale transistors, dopant atoms can significantly affect the transport characteristics, in particular at low temperatures. Investigation of coupling between neighboring dopants in such devices is essential in defining the properties for transport. In this work, we present an overview of different regimes of inter-dopant coupling, controlled by doping concentration and a selective doping process. Tunneling-transport spectroscopy can reveal the fundamental physics of isolated dopants in comparison with strongly-coupled dopants. In addition, observations of surface potential for Si nano-transistors can provide direct access to understanding the behavior of coupled dopants.

Dopant atoms, Nanoscale, Quantum dot, Silicon, Tunneling transport

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