• International Journal of Technology (IJTech)
  • Vol 2, No 2 (2011)

Design of CMOS RFIC UWB Carrier-Less and Carrier-Based Transmitters

Design of CMOS RFIC UWB Carrier-Less and Carrier-Based Transmitters

Title: Design of CMOS RFIC UWB Carrier-Less and Carrier-Based Transmitters
Meng Miao, Rui Xu, Yalin Jin, Cam Nguyen

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Published at : 17 Jan 2014
Volume : IJtech Vol 2, No 2 (2011)
DOI : https://doi.org/10.14716/ijtech.v2i2.55

Cite this article as:
Miao, M., Xu, R., Jin, Y., Nguyen, C., 2011. Design of CMOS RFIC UWB Carrier-Less and Carrier-Based Transmitters. International Journal of Technology. Volume 2(2), pp. 156-163

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Meng Miao Intel Corporation, Chandler, Arizona 85226 USA
Rui Xu Qualcomm Inc. San Diego, CA 92014 USA
Yalin Jin Skyworks Corporation Irvine, California 92617 USA
Cam Nguyen Department of Electrical and Computer Engineering, Texas A&M University
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Abstract
Design of CMOS RFIC UWB Carrier-Less and Carrier-Based Transmitters

This paper presents new carrier-based and carrier-less ultra-wideband (UWB) transmitter architectures and their CMOS implementation. The carrier-based transmitter designed using a 0.18-?m CMOS process adopts a double-stage switching to enhance RF-power efficiency, reduce dc-power consumption and circuit complexity, and increase switching speed and isolation. Measurement results show that the generated UWB signal can vary from 2 V peak-to-peak with 3-dB 4-ns pulse width to 1 V with 0.5 ns, covering 10-dB signal bandwidths from 0.5 to 4 GHz, respectively. The generated UWB signal can be tuned to cover the entire UWB frequency range of 3.1 to 10.6 GHz. The carrier-less transmitter integrates tuning delay circuit, square-wave generator, impulse-forming circuit, and pulse-shaping circuit in a single chip using a standard low-cost 0.25-?m CMOS process. It can generate monocycle pulse and Gaussian-type impulse (without the pulse-shaping circuitry) signals with tunable pulse duration. Measured results show that the carrier-less transmitter can produce 0.3–0.6 V peak-to-peak monocycle pulse with 140–350 ps tunable pulse-duration and 0.5–1.3 V peak-to-peak impulse signal with 100–300 ps tunable pulse-duration.

CMOS RFIC, transmitter, UWB transmitter, UWB system, UWB communications and radar

References

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TSMC 0.18-?m CMOS Process, MOSIS Foundry, Marina del Rey, California, USA.
TSMC 0.25-?m CMOS Process, MOSIS Foundry, Marina del Rey, California, USA.