|Meng Miao||Intel Corporation, Chandler, Arizona 85226 USA|
|Rui Xu||Qualcomm Inc. San Diego, CA 92014 USA|
|Yalin Jin||Skyworks Corporation Irvine, California 92617 USA|
|Cam Nguyen||Department of Electrical and Computer Engineering, Texas A&M University|
This paper presents new carrier-based and carrier-less ultra-wideband
(UWB) transmitter architectures and their CMOS implementation. The
carrier-based transmitter designed using a 0.18-?m CMOS process adopts a
double-stage switching to enhance RF-power efficiency, reduce dc-power
consumption and circuit complexity, and increase switching speed and
isolation. Measurement results show that the generated UWB signal can
vary from 2 V peak-to-peak with 3-dB 4-ns pulse width to 1 V with 0.5
ns, covering 10-dB signal bandwidths from 0.5 to 4 GHz, respectively.
The generated UWB signal can be tuned to cover the entire UWB frequency
range of 3.1 to 10.6 GHz. The carrier-less transmitter integrates tuning
delay circuit, square-wave generator, impulse-forming circuit, and
pulse-shaping circuit in a single chip using a standard low-cost 0.25-?m
CMOS process. It can generate monocycle pulse and Gaussian-type impulse
(without the pulse-shaping circuitry) signals with tunable pulse
duration. Measured results show that the carrier-less transmitter can
produce 0.3–0.6 V peak-to-peak monocycle pulse with 140–350 ps tunable
pulse-duration and 0.5–1.3 V peak-to-peak impulse signal with 100–300 ps
CMOS RFIC, transmitter, UWB transmitter, UWB system, UWB communications and radar
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TSMC 0.18-?m CMOS Process, MOSIS Foundry, Marina del Rey, California, USA.
TSMC 0.25-?m CMOS Process, MOSIS Foundry, Marina del Rey, California, USA.