A Simple Three Branch Optical Power Splitter Design based on III-Nitride Semiconductor for Optical Telecommunication
Corresponding email: retno.wigajatri@ui.ac.id
Published at : 29 Apr 2016
Volume : IJtech
Vol 7, No 4 (2016)
DOI : https://doi.org/10.14716/ijtech.v7i4.3172
Purnamaningsih, R.W., & Poespawati, N.R.& Dogeche, E.Pavlidis, D., 2016. A Simple Three Branch Optical Power Splitter Design based on III-Nitride Semiconductor for Optical Telecommunication. International Journal of Technology. Volume 7(4), pp.701-708
| Retno Wigajatri Purnamaningsih | Laboratory of Optoelectronics, Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus UI Depok, Depok 16424, Indonesia |
| Nyi Raden Poespawati | Laboratory of Optoelectronics, Department of Electrical Engineering, Faculty of Engineering, Universitas Indonesia, Kampus UI Depok, Depok 16424, Indonesia |
| Elhadj Dogeche | Institute of Electronics, Microelectronics and Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520), Cite’ scientifique, 59650 Villeneuve d’Ascq, France |
| Dimitris Pavlidis | Department of Electrical and Computer Engineering, Boston University, 8 St Mary’s St, Boston, MA 02215, USA |
We propose a simple design of 1×3 optical power splitter which uses gallium nitride (GaN) on sapphire. The design consists of widely used large cross section input rib waveguide, a rectangular multimode interference (MMI) structure, and three-branch rib waveguides. The MMI structure is selected since their attractive performances, such as compactness, low excess loss, wide bandwidth and ease to fabricate. The power splitter is designed for the third telecommunication window, i.e., l = 1.55 µm. Optimization of the geometrical structure parameters for the design is conducted theoretically utilizing 3D FD-BPM method. It is found that the power splitter exhibits excess loss of 0.46 dB and imbalanced of 0.001 dB at l = 1.55 µm for
GaN; MMI structure, Optical power splitter, Optical communication, Three branches
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