Vol 6, No 3 (2015) > Electrical, Electronics and Computer Engineering >

Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement

A. A. N. Gde Sapteka, Djoko Hartanto, Harry Sudibyo, Michiharu Tabe, Daniel Moraru, Hoang Nhat Tan, Ryousuke Unno, Arief Udhiarto, Sri Purwiyanti

 

Abstract:

This report is
focused on the linear region of I-V characteristics of nanoscale highly-doped p-i-n diodes fabricated within ultrathin
silicon-on-insulator (SOI) structures with an intrinsic
layer length of 200 nm and 700 nm under a forward bias at a temperature
range from 50 K to 250 K.  The doping
concentrations of Boron and Phosphorus in SOI p-i-n diodes are high, 1×1020 cm-3 and 2×1020
cm-3, respectively. The linearity of I-V characteristics of the p-i-n diodes under a certain
forward bias voltage range and temperature range from 50 K to 250 K indicate
these devices are suitable for low temperature sensing purposes.
We conclude that highly-doped p-i-n
diodes produce a higher current as the temperature
decreases under a certain bias voltage range. Nanoscale
diodes with longer and wider intrinsic layers
generate higher currents under a certain range of bias
voltage and low temperature measurements.

Keywords: I-V characteristics; P-I-N diode; SOI; Sensor; Temperature

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References


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